 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Applications Low drain-source ON resistance High forward transfer admittance : RDS (ON) = 12 m (typ.) : |Yfs| = 33 S (typ.) Unit: mm Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 20 26 78 25 63 26 2.5 150 -55~150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 5.0 62.5 Unit C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 25 V, Tch = 25C (initial), L = 97 H, IAR = 26 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-09-27 2SK3846 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf toff Qg Qgs Qgd VDD 32 V, VGS = 10 V, ID = 26 A ton 4.7 10 V 0V ID = 13 A RL = 1.54 VOUT -- 22 -- ns -- 10 -- VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 40 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 13 A VGS = 10 V, ID = 13 A VDS = 10 V, ID = 13 A Min -- -- 40 15 1.5 -- -- 16 -- -- -- -- Typ. -- -- -- -- -- 19 12 33 1980 210 300 7 Max 10 100 -- -- 2.5 26 16 -- -- -- -- -- pF Unit A A V V m S VDD 20 V - Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") Charge Duty < 1%, tw = 10 s = -- -- -- -- 60 40 28 12 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = 26 A, VGS = 0 V IDR = 26 A, VGS = 0 V dIDR / dt = 50 A / s Min -- -- -- -- -- Typ. -- -- -- 40 24 Max 26 78 -1.5 -- -- Unit A A V ns nC Marking K3846 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-09-27 2SK3846 ID - VDS 20 Common source Tc = 25C 8 Pulse test 5.5 5 12 4.75 4.5 3.5 10 6 4.25 4 100 ID - VDS Common source Tc = 25C Pulse test 5 4.75 4.5 40 4.25 4 3.75 20 VGS = 3 V 3.5 3.25 16 (A) (A) 3.75 80 10 8 6 5.5 ID ID 3.25 VGS = 3 V 60 Drain current 8 4 0 Drain current 0 0.1 0.2 0.3 0.4 0.5 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 100 VDS - VGS 1.0 VDS (V) Common source VDS = 10 V Pulse test Common source Tc = 25C Pulse test 80 0.8 ID (A) 60 40 25 20 100 0 Tc = -55C Drain-source voltage 0.6 Drain current 0.4 ID = 26 A 0.2 13 6.5 0 0 4 8 12 16 20 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID (S) 100 RDS (ON) - ID 1000 Common source Tc = 25C Pulse test Yfs Forward transfer admittance Tc = -55C 25 10 100 Drain-source ON resistance RDS (ON) (m) Common source VDS = 10 V Pulse test 100 VGS = 4.5 V 10 1 1 10 100 10 1 10 100 Drain current ID (A) Drain current ID (A) 3 2006-09-27 2SK3846 RDS (ON) - Tc 50 IDR - VDS 100 Common source Tc = 25C Pulse test 10 5 10 3 1 VGS = 0, -1 V Drain-source ON resistance RDS (ON) (m) 40 30 13 6.5 20 VGS = 4.5 V ID = 26, 13, 6.5 A 10 VGS = 10 V 0 -80 -40 0 40 80 120 160 Drain reverse current ID = 26 A IDR 1 (A) Common source Pulse test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Case temperature Tc (C) Drain-source voltage VDS (V) C - VDS 10000 5 Vth - Tc Vth (V) Common source VDS = 10 V ID = 1 mA Pulse test (pF) 4 Gate threshold voltage Ciss 1000 C 3 Capacitance 2 Common source VGS = 0 V f = 1 MHz Tc = 25C 100 0.1 1 10 1 Coss Crss 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 50 50 Dynamic input/output characteristics VDS (V) Common source ID = 26 A Tc = 25C Pulse test VDS 30 16 VDS = 32 V 12 20 (W) Drain power dissipation Drain-source voltage 30 20 20 8 8 10 10 VGS 0 0 20 40 60 80 4 0 0 40 80 120 160 0 100 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-09-27 Gate-source voltage VGS PD 40 40 16 (V) 2SK3846 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse PDM t T Duty = t/T Rth (ch-c) = 5.0C/W 1m 10 m 100 m 1 10 0.01 0.01 10 100 Pulse width tw (s) Safe operating area 1000 100 EAS - Tch EAS (mJ) 1 ms * 80 100 ID max (Pulse) * 60 ID max (Continuous) 10 ms * 10 DC operation Tc = 25C Avalanche energy (A) Drain current ID 40 20 0 25 1 * Single nonrepetitive pulse Tc = 25C 50 75 100 125 150 Channel temperature (initial) BVDSS IAR VDD Test circuit RG = 25 VDD = 25 V, L = 48 H Tch (C) Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 100 15 V 0V Drain-source voltage VDS (V) VDS Wave form AS = 1 B VDSS L I2 B 2 - VDD VDSS 5 2006-09-27 2SK3846 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-09-27 |
Price & Availability of 2SK3846
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |